AOS · FETs & Power MOSFETs · MPN AON6484
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| Gate Charge(Qg) | 24nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 3.3A;12A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.7V |
| Pd - Power Dissipation | 2W;25W |
| RDS(on) | 79mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 942pF |
100V 2.7V 79mΩ@10V 1 N-channel DFN-8(5x6) Single FETs, MOSFETs RoHS