AOS · FETs & Power MOSFETs · MPN AOI9N50
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| Gate Charge(Qg) | 24nC@10V |
|---|---|
| Drain to Source Voltage | 500V |
| Current - Continuous Drain(Id) | 9A |
| Operating Temperature - | -50℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 178W |
| Reverse Transfer Capacitance (Crss@Vds) | 12pF |
| RDS(on) | 860mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.16nF |
500V 9A 4.5V 178W 860mΩ@10V 1 N-channel TO-251A Single FETs, MOSFETs RoHS