AOS · FETs & Power MOSFETs · MPN AOI7S65
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| Gate Charge(Qg) | 9.2nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 7A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 89W |
| RDS(on) | 650mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 434pF |
650V 7A 4V 89W 650mΩ@10V 1 N-channel TO-251A Single FETs, MOSFETs RoHS