AOS · FETs & Power MOSFETs · MPN AOI4N60
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| Drain to Source Voltage | 600V |
|---|---|
| Gate Charge(Qg) | 14.5nC@10V |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -50℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | - |
| Reverse Transfer Capacitance (Crss@Vds) | 4.8pF |
| RDS(on) | 2.3Ω@10V |
| Number | - |
| Input Capacitance(Ciss) | 528pF |
600V 4A 4.5V 2.3Ω@10V TO-251A Single FETs, MOSFETs RoHS