AOS · FETs & Power MOSFETs · MPN AOI2N60
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| Drain to Source Voltage | 600V |
|---|---|
| Gate Charge(Qg) | 11nC@10V |
| Current - Continuous Drain(Id) | 2A |
| Operating Temperature - | -50℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 56.8W |
| Reverse Transfer Capacitance (Crss@Vds) | 3.4pF |
| RDS(on) | 4.4Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 325pF |
600V 2A 4.5V 56.8W 4.4Ω@10V 1 N-channel TO-251A Single FETs, MOSFETs RoHS