AOS · FETs & Power MOSFETs · MPN AOI1R4A70
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| Gate Charge(Qg) | 8nC@10V |
|---|---|
| Drain to Source Voltage | 700V |
| Current - Continuous Drain(Id) | 3.8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.1V |
| Pd - Power Dissipation | 48W |
| RDS(on) | 1.4Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 354pF |
700V 3.8A 4.1V 48W 1.4Ω@10V 1 N-channel TO-251A Single FETs, MOSFETs RoHS