AOS AOD9N50

AOS · FETs & Power MOSFETs · MPN AOD9N50

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Specifications

Gate Charge(Qg)24nC@10V
Drain to Source Voltage500V
Current - Continuous Drain(Id)-
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)12pF
RDS(on)860mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.16nF

Technical details

500V 4.5V 860mΩ@10V 1 N-channel TO-252(DPAK) Single FETs, MOSFETs RoHS

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