AOS AOD7S65

AOS · FETs & Power MOSFETs · MPN AOD7S65

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Specifications

Gate Charge(Qg)9.2nC@10V
Drain to Source Voltage650V
Current - Continuous Drain(Id)-
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.6V
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)650mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)434pF

Technical details

650V 2.6V 650mΩ@10V 1 N-channel TO-252(DPAK) Single FETs, MOSFETs RoHS

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