AOS AOD558

AOS · FETs & Power MOSFETs · MPN AOD558

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)18nC@10V
Current - Continuous Drain(Id)17A;50A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.4V
Pd - Power Dissipation2.5W;50W
RDS(on)5.4mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.187nF

Technical details

30V 2.4V 5.4mΩ@10V 1 N-channel TO-252(DPAK) Single FETs, MOSFETs RoHS

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