AOS AOD2N100

AOS · FETs & Power MOSFETs · MPN AOD2N100

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Specifications

Gate Charge(Qg)15nC@10V
Drain to Source Voltage1kV
Output Capacitance(Coss)45pF
Current - Continuous Drain(Id)2A
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation83W
Reverse Transfer Capacitance (Crss@Vds)4pF
RDS(on)9Ω@10V
Number1 N-channel
Input Capacitance(Ciss)580pF
TypeN-Channel

Technical details

1kV 2A 4.5V 83W 9Ω@10V 1 N-channel N-Channel TO-252-2(DPAK) Single FETs, MOSFETs RoHS

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