AOS AOB66920L

AOS · FETs & Power MOSFETs · MPN AOB66920L

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Specifications

Gate Charge(Qg)50nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)22.5A;80A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation-
RDS(on)8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.5nF

Technical details

100V 2.5V 8mΩ@10V 1 N-channel TO-263(D2PAK) Single FETs, MOSFETs RoHS

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