AOS · FETs & Power MOSFETs · MPN AOB66916L
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| Gate Charge(Qg) | 78nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 35.5A;120A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 8.3W;277W |
| RDS(on) | 3.6mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.18nF |
100V 3.5V 3.6mΩ@10V 1 N-channel TO-263(D2PAK) Single FETs, MOSFETs RoHS