AOS AOB29S50L

AOS · FETs & Power MOSFETs · MPN AOB29S50L

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Specifications

Gate Charge(Qg)26.6nC@10V
Drain to Source Voltage500V
Current - Continuous Drain(Id)29A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.9V
Pd - Power Dissipation-
RDS(on)150mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.312nF

Technical details

500V 29A 3.9V 150mΩ@10V 1 N-channel TO-263(D2PAK) Single FETs, MOSFETs RoHS

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