AOS · FETs & Power MOSFETs · MPN AOB266L
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| Gate Charge(Qg) | 80nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 18A;140A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.2V |
| Pd - Power Dissipation | 2.1W;268W |
| RDS(on) | 3.2mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.8nF |
60V 3.2V 3.2mΩ@10V 1 N-channel TO-263(D2Pak) Single FETs, MOSFETs RoHS