AOS · FETs & Power MOSFETs · MPN AOB20S60L
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| Gate Charge(Qg) | 19.8nC@10V |
|---|---|
| Drain to Source Voltage | 600V |
| Current - Continuous Drain(Id) | 20A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.1V |
| Pd - Power Dissipation | 266W |
| RDS(on) | 199mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.038nF |
600V 20A 4.1V 266W 199mΩ@10V 1 N-channel TO-263(D2Pak) Single FETs, MOSFETs RoHS