AOS · FETs & Power MOSFETs · MPN AOB12N65L
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| Gate Charge(Qg) | 48nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 12A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 2.2W |
| Reverse Transfer Capacitance (Crss@Vds) | 18pF |
| RDS(on) | 720mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.15nF |
650V 12A 4.5V 2.2W 720mΩ@10V 1 N-channel TO-263(D2PAK) Single FETs, MOSFETs RoHS