AOS · FETs & Power MOSFETs · MPN AOB1100L
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| Gate Charge(Qg) | 100nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 8A;130A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.8V |
| Pd - Power Dissipation | 2.1W;500W |
| RDS(on) | 11.7mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.833nF |
100V 3.8V 11.7mΩ@10V 1 N-channel TO-263(D2PAK) Single FETs, MOSFETs RoHS