AOS AOB1100L

AOS · FETs & Power MOSFETs · MPN AOB1100L

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Specifications

Gate Charge(Qg)100nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)8A;130A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.8V
Pd - Power Dissipation2.1W;500W
RDS(on)11.7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.833nF

Technical details

100V 3.8V 11.7mΩ@10V 1 N-channel TO-263(D2PAK) Single FETs, MOSFETs RoHS

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