AOS · FETs & Power MOSFETs · MPN AO6608
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| Current - Continuous Drain(Id) | - |
|---|---|
| Pd - Power Dissipation | - |
| RDS(on) | 135mΩ@1.8V |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Drain to Source Voltage | 30V |
| Type | N-Channel + P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF |
| Input Capacitance(Ciss) | 510pF |
| Gate Charge(Qg) | 10nC@10V |
| Operating Temperature | -55℃~+150℃ |
| Output Capacitance(Coss) | 70pF |
135mΩ@1.8V 1.5V TSOP-6 FET, MOSFET Arrays RoHS