AOS · FETs & Power MOSFETs · MPN AO6602L
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| Current - Continuous Drain(Id) | 3.1A;2.7A |
|---|---|
| RDS(on) | 54mΩ@10V |
| Pd - Power Dissipation | 1.15W |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Drain to Source Voltage | 30V |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF;44pF |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 200pF |
| Gate Charge(Qg) | 3.1nC@10V |
| Operating Temperature | -55℃~+150℃ |
54mΩ@10V 1.15W 3V 1 N-Channel + 1 P-Channel TSOP-6-1.5mm FET, MOSFET Arrays RoHS