AOS AO6601

AOS · FETs & Power MOSFETs · MPN AO6601

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Specifications

Current - Continuous Drain(Id)20A
RDS(on)60mΩ@10V
Pd - Power Dissipation-
Gate Threshold Voltage (Vgs(th))1.5V
Drain to Source Voltage30V
TypeN-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds)25pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)285pF
Gate Charge(Qg)12nC@10V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)45pF

Technical details

20A 60mΩ@10V 1.5V 1 N-Channel + 1 P-Channel TSOP-6-1.5mm FET, MOSFET Arrays RoHS

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