AOS · FETs & Power MOSFETs · MPN AO4806
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| Configuration | - |
|---|---|
| Current - Continuous Drain(Id) | - |
| Pd - Power Dissipation | - |
| RDS(on) | 14mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Drain to Source Voltage | 20V |
| Reverse Transfer Capacitance (Crss@Vds) | 200pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 1.81nF |
| Gate Charge(Qg) | 17.9nC@4.5V |
| Operating Temperature | - |
| Output Capacitance(Coss) | 232pF |
14mΩ@10V 1V 2 N-Channel SOIC-8 FET, MOSFET Arrays RoHS