AOS AO4449

AOS · FETs & Power MOSFETs · MPN AO4449

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)16nC@10V
Current - Continuous Drain(Id)7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.4V
Pd - Power Dissipation3.1W
RDS(on)34mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)910pF

Technical details

P-Channel 30V 7A 3.1W Surface Mount SOIC-8

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