ANHI AUR014N10

ANHI · FETs & Power MOSFETs · MPN AUR014N10

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Specifications

Gate Charge(Qg)231nC
Drain to Source Voltage100V
Current - Continuous Drain(Id)395A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation313W
RDS(on)1.2mΩ
Reverse Transfer Capacitance (Crss@Vds)398pF
Number1 N-channel
Input Capacitance(Ciss)13nF

Technical details

N-Channel 100V 395A 313W Surface Mount TOLL

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