ANHI AUP049N10

ANHI · FETs & Power MOSFETs · MPN AUP049N10

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Specifications

Gate Charge(Qg)63.7nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)379pF
Current - Continuous Drain(Id)136A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation161W
Reverse Transfer Capacitance (Crss@Vds)15.3pF
RDS(on)4.9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.864nF
TypeN-Channel

Technical details

N-Channel 100V 136A 161W Through Hole TO-220

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