ANHI AUP034N10

ANHI · FETs & Power MOSFETs · MPN AUP034N10

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Specifications

Gate Charge(Qg)138nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)-
Current - Continuous Drain(Id)195A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation330W
RDS(on)3.4mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)280pF
Number1 N-channel
Input Capacitance(Ciss)10nF
TypeN-Channel

Technical details

N-Channel 100V 195A 330W Through Hole TO-220

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