ANHI · FETs & Power MOSFETs · MPN AUN084N10
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| Gate Charge(Qg) | 41.7nC |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 68A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 66W |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF |
| RDS(on) | 8.4mΩ |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.93nF |
N-Channel 100V 68A 66W Surface Mount DFN-8(5x6)