ANHI · FETs & Power MOSFETs · MPN AUN063N10
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| Gate Charge(Qg) | 60.7nC |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 123A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.9V |
| Pd - Power Dissipation | 151W |
| Reverse Transfer Capacitance (Crss@Vds) | 14.6pF |
| RDS(on) | 6.3mΩ |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.68nF |
N-Channel 100V 123A 151W Surface Mount DFN5x6-8