ANHI AUN050N08BGL

ANHI · FETs & Power MOSFETs · MPN AUN050N08BGL

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Specifications

Drain to Source Voltage85V
Gate Charge(Qg)63.7nC@10V
Output Capacitance(Coss)1.215nF
Current - Continuous Drain(Id)65A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation151W
Reverse Transfer Capacitance (Crss@Vds)107.1pF
RDS(on)5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.553nF
TypeN-Channel

Technical details

N-Channel 85V 65A 151W Surface Mount DFN5x6-8

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