ANHI AUB056N10

ANHI · FETs & Power MOSFETs · MPN AUB056N10

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Specifications

Gate Charge(Qg)63.7nC
Drain to Source Voltage100V
Current - Continuous Drain(Id)136A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation161W
Reverse Transfer Capacitance (Crss@Vds)15.3pF
RDS(on)5.3mΩ
Number1 N-channel
Input Capacitance(Ciss)3.864nF

Technical details

N-Channel 100V 136A 161W Surface Mount TO-263

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