ANHI · FETs & Power MOSFETs · MPN AUB040N10
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| Gate Charge(Qg) | 176.8nC |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 176A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 229W |
| Reverse Transfer Capacitance (Crss@Vds) | 480pF |
| RDS(on) | 3.7mΩ |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.929nF |
N-Channel 100V 176A 229W Surface Mount TO-263