ANHI AUB040N10

ANHI · FETs & Power MOSFETs · MPN AUB040N10

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Specifications

Gate Charge(Qg)176.8nC
Drain to Source Voltage100V
Current - Continuous Drain(Id)176A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation229W
Reverse Transfer Capacitance (Crss@Vds)480pF
RDS(on)3.7mΩ
Number1 N-channel
Input Capacitance(Ciss)3.929nF

Technical details

N-Channel 100V 176A 229W Surface Mount TO-263

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