ANHI AUB034N10

ANHI · FETs & Power MOSFETs · MPN AUB034N10

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Specifications

Gate Charge(Qg)138nC
Drain to Source Voltage100V
Current - Continuous Drain(Id)214A
Operating Temperature --55℃~+170℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation330W
RDS(on)3.4mΩ
Reverse Transfer Capacitance (Crss@Vds)280pF
Number1 N-channel
Input Capacitance(Ciss)10nF

Technical details

N-Channel 100V 214A 330W Surface Mount TO-263

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