ANHI AUA039N10

ANHI · FETs & Power MOSFETs · MPN AUA039N10

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Specifications

Configuration-
Gate Charge(Qg)60.7nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)865pF
Current - Continuous Drain(Id)125A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation30W
Reverse Transfer Capacitance (Crss@Vds)83pF
RDS(on)3.9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.562nF

Technical details

N-Channel 100V 125A 30W Through Hole TO-220F

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