ANHI · FETs & Power MOSFETs · MPN ASW65R120EFD
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| Gate Charge(Qg) | 55.4nC@10V |
|---|---|
| Drain to Source Voltage | 655V |
| Output Capacitance(Coss) | 89pF |
| Current - Continuous Drain(Id) | 30A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 277.8W |
| Reverse Transfer Capacitance (Crss@Vds) | 2pF |
| RDS(on) | 120mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.657nF |
| Type | N-Channel |
N-Channel 655V 30A 277.8W Through Hole TO-247