ANHI · FETs & Power MOSFETs · MPN ASW65R110E
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| Gate Charge(Qg) | 52nC |
|---|---|
| Drain to Source Voltage | 655V |
| Current - Continuous Drain(Id) | 30A |
| Operating Temperature - | -55℃~+100℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.2V |
| Pd - Power Dissipation | 277.8W |
| Reverse Transfer Capacitance (Crss@Vds) | 6.75pF |
| RDS(on) | 110mΩ |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.497nF |
N-Channel 655V 30A 277.8W Through Hole TO-247