ANHI · FETs & Power MOSFETs · MPN ASW65R041EFDA
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| Drain to Source Voltage | 700V |
|---|---|
| Gate Charge(Qg) | 290.6nC |
| Current - Continuous Drain(Id) | 80A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 500W |
| Reverse Transfer Capacitance (Crss@Vds) | 12.1pF |
| RDS(on) | 41mΩ |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.356nF |
N-Channel 700V 80A 500W Through Hole TO-247