ANHI · FETs & Power MOSFETs · MPN ASW60R150E
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| Gate Charge(Qg) | 47.59nC |
|---|---|
| Drain to Source Voltage | 600V |
| Current - Continuous Drain(Id) | 28A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 195W |
| RDS(on) | 120mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 5.07pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.389nF |
600V 28A 195W Through Hole TO-247