ANHI · FETs & Power MOSFETs · MPN ASW60R029EFD
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| Configuration | Half-Bridge |
|---|---|
| Gate Charge(Qg) | 153.3nC@10V |
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 165.6pF |
| Current - Continuous Drain(Id) | 90A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.8V |
| Pd - Power Dissipation | 500W |
| RDS(on) | 29mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 0.44pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 8.001nF |
N-Channel 650V 90A 500W Through Hole TO-247