ANHI · FETs & Power MOSFETs · MPN ASW50R130E
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| Gate Charge(Qg) | 32.9nC |
|---|---|
| Drain to Source Voltage | 550V |
| Current - Continuous Drain(Id) | 30A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 160W |
| Reverse Transfer Capacitance (Crss@Vds) | 1.31pF |
| RDS(on) | 113mΩ |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.446nF |
N-Channel 30A 160W Through Hole TO-247