ANHI · FETs & Power MOSFETs · MPN ASU65R1K4E
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| Gate Charge(Qg) | 5.76nC |
|---|---|
| Drain to Source Voltage | 655V |
| Output Capacitance(Coss) | 25pF |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 28W |
| Reverse Transfer Capacitance (Crss@Vds) | 4.2pF |
| RDS(on) | 1.4Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 238pF |
| Type | N-Channel |
N-Channel 655V 4A 28W Through Hole TO-251