ANHI ASR65R120EFD

ANHI · FETs & Power MOSFETs · MPN ASR65R120EFD

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Specifications

Gate Charge(Qg)55.4nC@10V
Drain to Source Voltage655V
Output Capacitance(Coss)89pF
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
RDS(on)120mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)2pF
Number1 N-channel
Input Capacitance(Ciss)2.657nF
TypeN-Channel

Technical details

N-Channel 655V 30A Surface Mount TOLL-8L

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