ANHI · FETs & Power MOSFETs · MPN ASR65R046EFD
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| Gate Charge(Qg) | 111nC |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 59A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 347W |
| RDS(on) | 46mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 10.73pF |
| Input Capacitance(Ciss) | 5.309nF |
| Type | N-Channel |
N-Channel 650V 59A 347W Surface Mount TOLL-8L