ANHI · FETs & Power MOSFETs · MPN ASM65R280E
No reviews yet — be the first to review ANHI ASM65R280E.
| Gate Charge(Qg) | 19.4nC |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 15A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.2V |
| Pd - Power Dissipation | 126W |
| RDS(on) | 280mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 1.21pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 953.8pF |
| Type | N-Channel |
N-Channel 650V 15A 126W Surface Mount DFN-8(8x8)