ANHI ASM65R265E

ANHI · FETs & Power MOSFETs · MPN ASM65R265E

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Specifications

Gate Charge(Qg)23.2nC
Drain to Source Voltage650V
Current - Continuous Drain(Id)15A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation125W
RDS(on)230mΩ
Reverse Transfer Capacitance (Crss@Vds)-
Number1 N-channel
Input Capacitance(Ciss)1.16nF

Technical details

N-Channel 650V 15A 125W Surface Mount DFN8x8

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