ANHI ASE70R950E

ANHI · FETs & Power MOSFETs · MPN ASE70R950E

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Specifications

Drain to Source Voltage750V
Gate Charge(Qg)10.3nC
Current - Continuous Drain(Id)6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation37W
Reverse Transfer Capacitance (Crss@Vds)4.55pF
RDS(on)950mΩ
Number1 N-channel
Input Capacitance(Ciss)377pF

Technical details

N-Channel 750V 6A 37W Surface Mount SOT223-2L

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