ANHI · FETs & Power MOSFETs · MPN ASD70R600E
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| Gate Charge(Qg) | 8nC |
|---|---|
| Drain to Source Voltage | 750V |
| Current - Continuous Drain(Id) | 8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.8V |
| Pd - Power Dissipation | 86W |
| RDS(on) | 600mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 3.55pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 599pF |
750V 8A 2.8V 86W 600mΩ 1 N-channel TO-252 Single FETs, MOSFETs RoHS