ANHI · FETs & Power MOSFETs · MPN ASD65R850E
No reviews yet — be the first to review ANHI ASD65R850E.
| Gate Charge(Qg) | 10.3nC |
|---|---|
| Drain to Source Voltage | 700V |
| Current - Continuous Drain(Id) | 6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 74W |
| Reverse Transfer Capacitance (Crss@Vds) | 4.55pF |
| RDS(on) | 850mΩ |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 377pF |
700V 6A 74W Surface Mount TO-252