ANHI · FETs & Power MOSFETs · MPN ASD65R550E
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| Gate Charge(Qg) | 8nC |
|---|---|
| Drain to Source Voltage | 700V |
| Current - Continuous Drain(Id) | 8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 178.1W |
| Reverse Transfer Capacitance (Crss@Vds) | 3.55pF |
| RDS(on) | 550mΩ |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 599pF |
700V 8A Surface Mount TO-252