ANHI · FETs & Power MOSFETs · MPN ASB65R300E
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| Drain to Source Voltage | 655V |
|---|---|
| Gate Charge(Qg) | 22.94nC |
| Current - Continuous Drain(Id) | 15A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 118W |
| RDS(on) | 300mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 5.11pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.02nF |
N-Channel 655V 15A 118W Surface Mount TO-263