ANHI · FETs & Power MOSFETs · MPN ASB65R220E
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| Gate Charge(Qg) | 32.23nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 134pF |
| Current - Continuous Drain(Id) | 20A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.2V |
| Pd - Power Dissipation | 126W |
| Reverse Transfer Capacitance (Crss@Vds) | 5.28pF |
| RDS(on) | 220mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.547nF |
| Type | N-Channel |
N-Channel 650V 20A 126W Surface Mount TO-263