ANHI · FETs & Power MOSFETs · MPN ASB60R150E
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| Drain to Source Voltage | 605V |
|---|---|
| Gate Charge(Qg) | 47.59nC@10V |
| Output Capacitance(Coss) | 218pF |
| Current - Continuous Drain(Id) | 28A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.2V |
| Pd - Power Dissipation | 195W |
| RDS(on) | 150mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 5.07pF |
| Input Capacitance(Ciss) | 2.389nF |
| Type | N-Channel |
N-Channel 605V 28A 195W Surface Mount TO-263